学历：

2011-2015福州大学理学学士，微电子学专业

2015-2021太阳集团官方网站入口工学博士，电子科学与技术专业

2019-2020 东京大学物性研究所联合培养博士，电子科学与技术专业

研究方向：

半导体材料与器件、微纳制造工艺、GaN基发光器件

主讲课程：

暂无

成果奖励：

暂无

课题项目：

GaN基垂直腔面发射激光器基础研究，国家自然科学基金（重点）项目，2016-2018 ，参与

III族半导体微谐振腔中自发辐射特性研究，国家自然科学基金面上项目，2015-2018，参与

代表作：

[1] R. B. Xu, Y. Mei, H. Xu, T. R. Yang, L. L. Ying, Z. W. Zheng, H. Long, B. P. Zhang, J. P. Liu. Effects of lateral optical confinement in GaN VCSELs with double dielectric DBRs[J]. IEEE Photonics Journal, 2020,12(99): 1-8.

[2] R. B. Xu, H. Xu, Y. Mei, X. L. Shi, L. Y. Ying, Z. W. Zheng, H. Long, Z. R. Qiu, B. P. Zhang, J. P. Liu. Emission dynamics of GaN-based blue resonant-cavity light-emitting diodes[J]. Journal of Luminescence, 2019, 216: 116717.

[3] R. B. Xu, Y. Mei, H. Xu, L. Y. Ying, Z. W. Zheng, H. Long, D. Zhang, B. P. Zhang, J. P. Liu. Green Vertical-Cavity Surface-Emitting Lasers Based on Combination of Blue-Emitting Quantum Wells and Cavity-Enhanced Recombination[J]. IEEE Transactions on Electron Devices, 2018, 65(10): 4401-4406.

[4] R. B. Xu, Y. Mei, B. P. Zhang, L. L. Ying, Z. W. Zheng, W. Hofmann, J. P. Liu, H. Yang, M. Li, J. Zhang. Simultaneous blue and green lasing of GaN-based vertical-cavity surface-emitting lasers[J]. Semiconductor Science and Technology, 2017, 32(10): 105012.

[5] Y. Mei, R. B. Xu, G. E. Weng, H. Xu, L. Y. Ying, Z. W. Zheng, H. Long, B. P. Zhang, W. Hofmann, J. P. Liu. Tunable InGaN quantum dot microcavity light emitters with 129 nm tuning range from yellow-green to violet[J]. Applied Physics Letter, 2017, 111(12): 121107.

[6] Y. Mei, R. B. Xu, H. Xu, L. Y. Ying, Z. W. Zheng, B. P. Zhang, M. Li, J. Zhang. A comparative study of thermal characteristics of GaN-based VCSELs with three different typical structures[J]. Semiconductor Science and Technology, 2017, 33(1): 015016.