2023年加入太阳集团官方网站入口功率半导体研究团队，有着近十年海外留学工作经历，专注新型半导体材料与器件的研究。主要研究方向包括宽禁带半导体、金属氧化物、薄膜晶体管、微纳器件制造与测试。在金属氧化物薄膜晶体管领域中取得了一些指标性成果，研制出目前国际最高电学性能的TiO2薄膜晶体管和InGaO薄膜晶体管，研究成果处于世界先进水平,发表SCI论文25篇，其中以第一作者发表SCI论文8篇,包括微电子领域顶级期刊 IEEE Electron Device Letters（3篇)、IEEE Transactions on Electron Devices、Applied Physics Letters、Applied Physics Express等杂志。参与并报告国际会议近二十篇，包括微电子领域顶级会议International Electron Devices Meeting、International VLSI Symposium on Technology, Systems and Applications、Electron Devices Technology and Manufacturing、Device Research Conference等，其中以第一作者身份作会议报告11篇。
学历：
2011-09 至 2015-06, 太阳集团官方网站入口, 微电子学, 学士
2015-09 至 2022-02, 美国特拉华大学, 电磁学与光子学, 博士
2022-02 至 2023-01, 美国普渡大学，电子工程系，博士后
研究方向：
宽禁带半导体、金属氧化物、薄膜晶体管、微纳器件制造与测试
学术兼职：
（1）2023-03 至今, 电气与电子工程师协会(IEEE)及电子元件分会（IEEE Electron Devices Society）会员(Member)
（2）2020-09 至 2022-09，电气与电子工程师协会(IEEE)及电子元件分会（IEEE Electron Devices Society）学生会员(Student Member)
成果奖励：
（1）2020-06，美国特拉华大学博士生奖学金(University of Delaware Doctoral Fellowship)；
（2）2019-05，美国特拉华大学电子工程系电子学与光子学最佳研究奖(The nanoelectronics, electromagnetics and photonics award, UD ECE Research Day)；
（3）2019-05、2017-05(两次)，美国特拉华大学班尼特奖学金(Bendett Fellowship);
（4）2019-05、2018-05(两次)，美国特拉华大学专业发展奖(Professional Development Award);
（5）2018-07，美国特拉华大学夏季博士生奖学金(Summer Doctoral Fellowship);
（6）2015-05，国家留学基金委奖学金；
（7）2015-05，太阳集团官方网站入口优秀毕业生；
（8）2012-09，国家奖学金；
（9）申请人本科学习期间，多次获得太阳集团官方网站入口校级奖学金、物理与机电工程学院院级奖学金、三好学生、优秀班干等荣誉称号。
代表作：
[1] J Zhang, D Zheng, Z Zhang, A Charnas, Z Lin and P. D. Ye, "Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition," IEEE Electron Device Letters, vol. 44, no. 2, pp. 273-276, Feb. 2023
[2] J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, P Liao, D Zemlyanov, and P. D. Ye, “Fluorine-passivated In2O3 Thin Film Transistors with Improved Electrical Performance via Low-Temperature CF4/N2O Plasma,” Applied Physics Letters, 121, 172101, 2022.
[3] J Zhang, M Jia, M Sales, Y Zhao, G Lin, P Cui, C Santiwipharat, C Ni, S McDonnell, Y Zeng, “Impact of ZrO2 dielectrics thickness on electrical performance of TiO2 thin film transistors with sub-2 V operation," ACS Applied Electronic Materials, 3, 12, 5483-5495, 2021.
[4] J Zhang, Y Zhang, P Cui, G Lin, C Ni and Y Zeng, "One-volt TiO2 Thin Film Transistors with Low-Temperature Process," IEEE Electron Device Letters, vol. 42, no. 4, pp. 521-524, April 2021.
[5] J Zhang, G Lin, P Cui, M Jia, Z Li, L Gundlach, Y Zeng, “Enhancement/Depletion Mode TiO2 Thin Film Transistors via O2/N2 Pre-annealing,” IEEE Transactions on Electron Devices, vol. 67, no. 6, pp. 2346-2351, June 2020.
[6] J Zhang, M. Sales, G Lin, P Cui, P Pepin, J Vohs, S McDonnell, Y Zeng, “Ultrathin-Body TiO2 Thin Film Transistors With Record On-Current Density, ON/OFF Current Ratio, and Subthreshold Swing via O2 Annealing,” IEEE Electron Device Letters, vol. 40, no. 9, pp. 1463-1466, Sept. 2019.
[7] J Zhang, P Cui, G Lin, Y Zhang, M Sales, M Jia, Z Li, C Goodwin, T Beebe, L Gundlach, C Ni, S McDonnell, Y Zeng, “High Performance Anatase-TiO2 Thin Film Transistors with two-step oxidized TiO2 Channel and Plasma Enhanced Atomic Layer-Deposited ZrO2 Gate Dielectric,” Appl. Phys. Express 12 096502, July 2019.
[8] J Zhang, K Shariar, G Lin, P Cui, Y Zeng, “Hydrogen silsesquioxane (HSQ) etching resistance dependence on substrate during dry etching,” Physica Status Solidi A,1800530(1)-1800530(5), 2018.
[9] J Zhang, Z Zhang, Z Lin, D Zheng, and P. D. Ye, “Ultra-thin atomic-layer-deposited InGaZnO thin film transistors with Back-End-of-Line Compatibility” IEEE Electron Device Technology and Manufacturing Conference, March 7-10, 2023.
[10] J Zhang, Z Zhang, Z Lin, D Zheng, and P. D. Ye, “Ultra-thin atomic-layer-deposited InGaZnO thin film transistors with Back-End-of-Line Compatibility” IEEE Electron Device Technology and Manufacturing Conference, March 7-10, 2023.
[11] Z Zhang, Z Lin, A Charnas, H Dou, Z Shang, J Zhang, M Si, H Wang, M. A. Alam and P. D. Ye, “Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents,” IEEE International Electron Devices Meeting, December 3-7, 2022.
[12] D Zheng, A Charnas, J Anderson, H Dou, Z Hu, Z Lin, Z Zhang, J Zhang, P. Y. Liao, M Si, H. Wang, D Weinstein and P. D. Ye, “First Demonstration of BEOL-Compatible Ultrathin Atomic-Layer-Deposited InZnO Transistors with GHz Operation and Record High Bias-Stress Stability,” IEEE International Electron Devices Meeting, December 3-7, 2022.
[13] J Zhang, Z Zhang, D Zheng, A Charnas, Z Lin, and P. D. Ye, “BEOL-Compatible Atomic-Layer-Deposited In-rich InGaO TFTs with High Positive-Gate-Bias-Stress Stability,” IEEE Semiconductor Interface Specialists Conference, December 7-10, 2022.
[14] J Zhang, A Charnas, Z Lin, D Zheng, Z Zhang, P Liao, and P. D. Ye, “Low-Temperature CF4/N2O Plasma Treated In2O3 Thin Film Transistors with Excellent Bias Stability,” IEEE Semiconductor Interface Specialists Conference, December 7-10, 2022.
[15] J Zhang and Y Zeng, "High-performance TiO2 thin film transistors using TiO2 as both channel and dielectric," IEEE Device Research Conference, June 26-29,2022.
[16] J Zhang, H Zhao, T Zhama, Y Zeng “Effect of gallium incorporation on electrical and material characteristics of TiO2 films for high-permittivity dielectric application, Compound Semiconductor Week, June 1-3, 2022.
[17] J Zhang, G Lin, P Cui, Y Zeng, “Crystallinity engineering of stoichiometric TiO2: transition from insulator to semiconductor,” IEEE Device Research Conference, June 20-23,2021.
[18] J Zhang, P Cui, G Lin, Y Zeng, “High-performance Sub-2 Volts TiO2 thin film transistors enabled by ultrathin ZrO2 gate dielectrics,” IEEE Electron Device Technology and Manufacturing Conference, April 8-11,2021.
[19] J Zhang, M Jia, G Lin, P Cui, Y Zeng, “Ionic doping of TiO2 thin film transistors using superacid treatment,” Electronic Materials Conference, June 24-26, 2020 (Late News).
[20] J Zhang, G Lin, P Cui, Y Zeng, “High-performance ultrathin body TiO2 TFTs with record on/off current ratio and subthreshold swing,” IEEE Device Research Conference, June 23-26,2019.
